Abstract

Integrated semiconductor optical amplifiers (SOAs) with high output power are essential components in many future photonic applications such as LIDAR, microwave photonics and coherent optical communication [1]. Even more so in integrated mode-locked lasers, where the amplifier can severely limit the pulse energy [2]. InP/InGaAsP SOAs with high optical confinement can suffer from two-photon absorption and non-linear absorption associated with the generated carriers.

© 2019 IEEE

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