Nano-lasers are promising light sources for compact photonic integrated circuits, due to their small footprint and low energy consumption . The recent demonstration of InP/InGaAs quantum well (QW) nano-lasers grown on (001)-oriented Silicon-on-insulator (SOI) suggests the possibility of the integration of telecom nano-scale light emitters with Si photonics platforms . Here, we show that the lasing wavelength of the nano-lasers could be tuned from the 1.3 μm to the 1.5 μm band via tailoring the length of the nano-cavity. We also unveil the mechanisms of this unusual wide-band lasing behavior through detailed theoretical study.
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