Miniature high peak power laser systems based on the microchip geometry are promising radiation sources for many applications, like micromanufacturing, remote sensing, data storage, LIBS, etc. The suitability and excellent performance of Yb:YAG/Cr:YAG micro-lasers were reported recently.[2, 3] This study follows our previous experiments  and it is focused on investigation of the temperature and pumping beam radius influence on the output parameters of the longitudinally diode-pumped passively Q-switched Yb:YAG/Cr:YAG microchip laser. The goal was to reach as high as possible output energy for given pumping power.
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