Trivalent terbium-doped materials have been attracting the attention of the scientific community due to the capacity of Tb3+ to emit in the visible range. Efficient laser operation at green and yellow wavelengths has been demonstrated previously while laser operation in the orange and red ranges is not expected due to detrimental excited state absorption (ESA) processes [1-4]. Previous research on laser operation of Tb3+ doped materials was performed under pumping with frequency doubled optically pumped semiconductor laser (2ω-OPSL). These blue emitting pump sources exhibit an excellent beam quality at output powers up to 5 W, but they are complex, bulky, and expensive, and thus not well suited for power scaling. Diode-pumping presents a cost-efficient alternative with potential for power scaling and miniaturization. The availability of InGaN-based blue laser diodes makes it possible to match the peak absorption wavelength of the 7F6 ➔65D4 transition of Tb3+ ions around 488 nm.
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