Abstract
There is a growing interest in generating mid-infrared (mid-IR) supercontinuum (SCG) using CMOS compatible platforms for applications such as, optical coherence tomography and molecular spectroscopy [1, 2]. SCG spanning from the telecom band to the SWIR (< 3μm) has already been achieved using silicon-based platforms such as silicon-on-insulator, silicon nitride-on-insulator and silicon-germanium-on-insulator [3-6] but has been limited to up ~3.5μm mainly due to the absorption in the silica substrate. Recently, SCG in the mid-IR up to 6 μm was reported from a silicon-on-sapphire platform [7] limited by the sapphire absorption. More recently, silicon-germanium (SiGe) alloys, with transparency potentially extending up to 15μm depending on the Ge content [8] have emerged as an attractive alternative platform for mid-IR photonics [9-11].
© 2017 IEEE
PDF ArticleMore Like This
Milan Sinobad, Pan Ma, Barry Luther-Davies, David Allioux, Regis Orobtchouk, David J. Moss, Stephen Madden, Salim Boutami, Jean-Marc Fedeli, Christelle Monat, and Christian Grillet
PD_2_5 European Quantum Electronics Conference (EQEC) 2017
Milan Sinobad, Pan Ma, Barry Luther-Davies, David Allioux, Regis Orobtchouk, David J. Moss, Stephen Madden, Salim Boutami, Jean-Marc Fedeli, Christelle Monat, and Christian Grillet
CD_14_4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2017
Milan Sinobad, Pan Ma, Barry Luther-Davies, Stephen Madden, David J. Moss, Regis Orobtchouk, Salim Boutami, Jean-Michel Hartmann, Jean-Marc Fedeli, Christelle Monat, and Christian Grillet
M2J.3 Optical Fiber Communication Conference (OFC) 2018