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  • 2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference
  • (Optica Publishing Group, 2017),
  • paper PD_2_5

Broadband mid-infrared supercontinuum generation in low loss dispersion engineered silicon-germanium waveguide

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Abstract

There is a growing interest in generating mid-infrared (mid-IR) supercontinuum (SCG) using CMOS compatible platforms for applications such as, optical coherence tomography and molecular spectroscopy [1, 2]. SCG spanning from the telecom band to the SWIR (< 3μm) has already been achieved using silicon-based platforms such as silicon-on-insulator, silicon nitride-on-insulator and silicon-germanium-on-insulator [3-6] but has been limited to up ~3.5μm mainly due to the absorption in the silica substrate. Recently, SCG in the mid-IR up to 6 μm was reported from a silicon-on-sapphire platform [7] limited by the sapphire absorption. More recently, silicon-germanium (SiGe) alloys, with transparency potentially extending up to 15μm depending on the Ge content [8] have emerged as an attractive alternative platform for mid-IR photonics [9-11].

© 2017 IEEE

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