Abstract
Continuous-wave (CW) DUV laser light sources with high powers have received significant attention in various fields including semiconductor wafer inspection and laser photo-emission electron microscopy [1,2]. These lasers are typically generated by a cavity-enhanced fourth harmonic generation (4HG) of Nd3+-doped solid-state lasers and Yb3+-doped fiber lasers operating near 1064 nm. In this paper, we report enhanced performance of the laser operation at 266 nm. A maximum output power reaches 14 W with a Brewster-cut BaB2O4 (BBO) and a newly designed enhancement cavity.
© 2017 IEEE
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