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  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CM_6_1

Direct writing of nanostructures embedded in various materials using femtosecond laser

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Abstract

Progress in high power ultrashort pulse lasers has opened new frontiers in physics and technology of light-matter interactions including laser surgery, integrated and fiber optics, optical data storage, to 3D nanostructuring [1, 2]. Meanwhile, it is well known that structural defects such as oxygen vacancies affect fundamental properties of material ranging from ionic and electronic conductivities, light emitting, to form birefringence. Although the mechanisms of the oxygen-defects self-organization induced by the femtosecond laser were proposed [3, 4], the most important issue to be resolved is remained, i.e. can the nanostructure be induced inside any material by the femtosecond laser irradiation? In addition, however the laser-induced carrier-trapping dynamics in glass is minutely studied [5], the dynamics of defect formation and evolution have remained poorly understood. Here we report that the periodic nanostructure can be also formed inside SiO2 glass, GeO2 glass, Si and GaP crystal. In the case of glass materials, the self-trapped exciton (STE) is involved in the process of the nanostructure self-organization [6]. Besides, in the case of semiconductor materials, its band structures are involved in the nanostructure formation. The periodic nanostructuring of inner part of Si and GaP crystal can be successfully accomplished by the infrared ultrashort pulse laser with a double pulse configuration. Particularly, we have confirmed that the periodic nanostructures with strained structure are formed inside Si crystal [7]. On the other hand, no apparent periodic nanostructures have been observed inside GaAs and GaN crystal.

© 2015 IEEE

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