Super-Resolution Mapping of Purcell Enhancement Variations within the Unit Cell of a Si Photonic Crystal

F. Hackl; E. Lausecker; R. Jannesari; M. Glaser; F. Schäffler; T. Fromherz

2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
(Optica Publishing Group, 2015),
paper CK_P_5

Super-Resolution Mapping of Purcell Enhancement Variations within the Unit Cell of a Si Photonic Crystal

F. Hackl, E. Lausecker, R. Jannesari, M. Glaser, F. Schäffler, and T. Fromherz

The European Conference on Lasers and Electro-Optics 2015

Munich Germany
21–25 June 2015
ISBN: 978-1-4673-7475-0

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F. Hackl, E. Lausecker, R. Jannesari, M. Glaser, F. Schäffler, and T. Fromherz, "Super-Resolution Mapping of Purcell Enhancement Variations within the Unit Cell of a Si Photonic Crystal," in 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, (Optica Publishing Group, 2015), paper CK_P_5.

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Abstract

For the development of efficient Silicon (Si) based light sources which are fully compatible with the standard CMOS technology one promising approach is the integration of SiGe islands in photonic crystal (PhC) structures, exploiting the effect of the enhancement of the spontaneous emission rate by modifying the density of photon states and the modal electric field distribution (Purcell effect) [1,2].

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