Abstract

Stoichiometric silicon nitride (Si₃N₄) is a promising CMOS-compatible material for integrated nonlinear photonics, such as supercontinuum generation (SCG) [1] and third harmonic generation (THG) [2] for spectrally extended frequency combs. Phase matching for excitation with near infrared fiber lasers requires the Si3N4 waveguide core to be bigger than 1000 nm by 600 nm, and we have recently introduced a novel method that offers crack-free wafer-scale fabrication with up to 800 nm width and, so far, 1200 nm thickness [3]. Due to the increased waveguide dimensions, these waveguides should allow for SCG in the fundamental mode and, simultaneously, for THG via phase matching of higher-order modes.

© 2015 IEEE