Abstract

In this work, we demonstrate an integration of a small-footprint InGaAsP nanobeam laser on a SiO₂/Si substrate without using any adhesive material via transfer-printing process [1,2]. The nanobeam was fabricated on a 280-nm-thick InGaAsP slab that contained three QWs in the middle as an active medium. It was fabricated by following a series of standard nanofabrication processes: e-beam lithography, Cl₂ assisted Ar-beam etching, O₂ ashing, and selective wet etching by using HCl solution (HCl:water = 4:1) at room temperature. With a help of micron-sized polydimethylsiloxane (PDMS) stamp developed by soft-lithography, the nanobeam was selectively released from its parent chip and directly printed on a foreign substrate (herein, SiO₂/Si substrate). The printed nanobeam has 16 air-holes and occupies physical volume of ~6.6×0.58×0.28 µm³. With this structural design, we observed single mode lasing near 1550 nm with continuous wave (CW) operation at room temperature.

© 2015 IEEE