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  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CE_P_15

Anti-Stokes photoluminescence in Ga/Bi co-doped sol-gel silica glass

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Abstract

The interest in Bismuth-activated optical materials is associated with many possible applications, especially in fiber lasers and amplifiers [1]. The lasing was demonstrated only in a few types of Bi-doped silica fibers: germanosilicate, aluminosilicate, aluminogermanosilicate and phosphosilicate [2]. Also, it was recognized that the lasing wavelength (or even lasing spectral region) is strongly affected by the co-dopant, namely, aluminium or phosphorus. Unfortunately, up to now there is no clear understanding of the mechanisms of the PL in Bi-doped silica glasses [1, 3] and even the assignment of some PL bands remains controversial in our opinion.

© 2015 IEEE

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