Abstract
Semiconductor nanowires (NWs) have been considered as excellent building blocks for future electronic and photonic devices due to their unique geometry and superior physical properties. Single NWs are particularly promising for nanolasers as they can function as a Fabry-Pérot (F-P) microcavity which provides good optical feedback for lasing. Up to date, room-temperature NW lasers have been widely reported in homogeneous materials, involving ZnO, GaN, and most recently, GaAs NWs [1-4]. The NW lasers abovementioned have a common feature that the NW acts as both the gain medium and optical cavity. The emission can be reabsorbed during its propagation in the NW cavity, resulting in a degradation of laser performance. A structure that decouples the gain medium and optical cavity, e. g., a NW radial quantum well (QW), can avoid the reabsorption as most of the emission from the gain medium propagate in the NW core which has a larger band gap than the QW. The NW/QW structure also possesses other advantages such as a stronger confinement of electrons and holes, as well as tunable emission wavelength with independent optimization of the cavity. In this paper, AlGaAs/GaAs NW/QW heterostructure is fabricated and the optical properties are investigated.
© 2015 IEEE
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