Abstract

Topologically insulating bismuth selenide (Bi₂Se₃) is a novel material with many potential applications in electronics and spintronics, due to its graphene-like massless Dirac cone for which charge carriers are scatter-resistant and spin-locked [1]. Studying the dynamics of the bulk and surface charge carriers provides an important advancement towards the potential of using topological insulators in practical devices. The recent discovery of a second set of surface states with a Dirac cone at approximately 1.7 eV [2] above the Fermi level opened an important door for studies utilizing ultrafast near infrared laser pulses.

© 2015 IEEE