GaSb-based 2µm Semiconductor Disk Laser: Power scaling for optical pumping of Ho:YAG

Peter Holl; Marcel Rattunde; Steffen Adler; Sebastian Kaspar; Wolfgang Bronner; Andreas Bächle; Rolf Aidam; Joachim Wagner; Karsten Scholle; Samir Lamrini; Peter Fuhrberg

2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
(Optica Publishing Group, 2015),
paper CB_P_7

GaSb-based 2µm Semiconductor Disk Laser: Power scaling for optical pumping of Ho:YAG

Peter Holl, Marcel Rattunde, Steffen Adler, Sebastian Kaspar, Wolfgang Bronner, Andreas Bächle, Rolf Aidam, Joachim Wagner, Karsten Scholle, Samir Lamrini, and Peter Fuhrberg

The European Conference on Lasers and Electro-Optics 2015

Munich Germany
21–25 June 2015
ISBN: 978-1-4673-7475-0

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P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, J. Wagner, K. Scholle, S. Lamrini, and P. Fuhrberg, "GaSb-based 2µm Semiconductor Disk Laser: Power scaling for optical pumping of Ho:YAG," in 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, (Optica Publishing Group, 2015), paper CB_P_7.

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Abstract

Semiconductor disk lasers (SDLs), also known as Vertical External Cavity Surface Emitting Lasers (VECSEL) feature simultaneously high output power and excellent beam quality. Exploiting semiconductor band-gap-engineering, GaSb-based devices emitting in the wavelength range between 1.9 µm and 2.8 µm and with cw output powers up to 5 W have been demonstrated [1–3].

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