Abstract

Broad area semiconductor (BAS) lasers, important light source in modern technology, are often limited in their application due to their spatial poor beam quality at high pump powers. There are two main factors which contribute to this: the lack of an intrinsic mode selection mechanism due to large transverse width of the structure, and modulation instability (MI) arising from self-focusing effect at high pump powers (Fig.1a).

© 2015 IEEE