Abstract

Low threshold visible lasers are useful for a number of applications including full color mobile projectors, optical data storage, heads-up displays in automobiles, in medicine and plastic fiber communication. Lasers emitting in the blue and green are generally realized with GaN-based InGaN/GaN quantum wells (QWs) as the gain media [1]. However, there are materials-related issues which compromise the performance characteristics and prevent the epitaxy of quantum wells for lasers emitting at longer wavelengths. On the other hand, self-organized quantum dots (QDs) which form by strain relaxation offer distinct advantages over quantum wells and their emission can be extended to longer wavelengths (λ ~ 630 nm). In this talk, I will describe the steady state and dynamic characteristics of green- and red-emitting InGaN/GaN quantum dot lasers [2-5].

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