Abstract
The development of semiconductor lasers in the deep ultra-violet (UV) spectral range is attracting a strong interest, related to their multiple applications for optical storage, biochemistry or optical interconnects. UV-emitting ridge lasers usually embed nitride heterostructures grown on complex buffer layers or expensive substrates – an approach that cannot be extended to nano-photonics and microlasers. We demonstrate here the first deep UV microlaser by combining binary GaN/AlN thin quantum wells (QWs) grown on a silicon substrate and high quality factor microdisk resonators. Those microdisk lasers operate at 275nm at room temperature under optical pumping.
© 2015 IEEE
PDF ArticleMore Like This
J. Sellés, C. Brimont, G. Cassabois, T. Guillet, B. Gayral, M. Mexis, F. Semond, I. Roland, Y. Zeng, X. Checoury, and P. Boucaud
SW4F.5 CLEO: Science and Innovations (CLEO:S&I) 2015
Noelia Vico Triviño, Raphael Butte, Jean-François Carlin, and Nicolas Grandjean
FW3E.6 CLEO: QELS_Fundamental Science (CLEO:FS) 2015
Chenxuan Yin, Jian Jian, Zengkai Shao, Yanfeng Zhang, Pengfei Xu, Lin Liu, Chunchuan Yang, Hui Chen, Yujie Chen, and Siyuan Yu
ASu2A.27 Asia Communications and Photonics Conference (ACP) 2015