Abstract
Energy bandgap of a semiconductor is one of the most important parameters for optoelectronic applications since it determines spectral features of absorptions and emission processes and other electronic and optical properties. Many applications such as lasers, solar cells, detectors, and LEDs can benefit greatly by having semiconductor with any desired bandgaps or variable bandgaps in a wide range. While it has been a challenging task to achieve materials with any desired bandgaps on a given substrate using the planar epitaxial technologies, nanomaterials such as nanowires open unprecedented opportunities of bandgap engineering through alloying with almost arbitrary compositions.
© 2015 IEEE
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