Abstract

High-power vertical-external-cavity surface-emitting lasers (VECSELs) operating in the 1160-1200 nm range offer a unique opportunity to develop practical lasers emitting yellow-orange radiation via second harmonic generation [1]. VECSELs based on GaInAs/GaAs/GaAsP have proven to be suitable for producing high power at the short infrared wavelengths (1000-1120 nm range). However, for longer wavelengths the high lattice strain related to the high indium composition of the quantum wells has limited the output power to much lower levels. The highest output power reported for a VECSEL gain chip, grown by metal-organic vapour-phase epitaxy (MOVPE), and emitting at 1028 nm is >100 W [2]. Whereas, for longer wavelengths of ~1180 nm the highest reported output power for MOVPE-grown gain chip is ~8 W [3].

© 2015 IEEE

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