Abstract

GaAs-based 850 nm VCSELs are the standard light source in short-reach high-speed optical interconnects in datacenters and supercomputers. The last few years have seen an impressive increase in VCSEL speed, reaching modulation bandwidths of 28 GHz and single-channel data rates of 57 Gbit/s (non-equalized) and 71 Gbit/s (equalized) under direct NRZ modulation [1-3]. Future optical interconnects will require even faster VCSELs capable of higher-speed transmission at lower energy dissipation. Here we present the results from our new generation of high-speed 850 nm VCSELs, a further development of our previous VCSEL design [1-3].

© 2015 IEEE

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