Q-switching of a Tm,Ho:KLu(WO4)2 Microchip Laser at 2061 nm by a Graphene-Based Saturable Absorber

Josep Maria Serres; Xavier Mateos; Pavel Loiko; Pavel Loiko; Venkatesan Jambunathan; Venkatesan Jambunathan; Konstantin Yumashev; Valentin Petrov; Uwe Griebner; Magdalena Aguiló; Francesc Díaz

2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
(Optica Publishing Group, 2015),
paper CA_4_5

Q-switching of a Tm,Ho:KLu(WO₄)₂ Microchip Laser at 2061 nm by a Graphene-Based Saturable Absorber

Josep Maria Serres, Xavier Mateos, Pavel Loiko, Venkatesan Jambunathan, Konstantin Yumashev, Valentin Petrov, Uwe Griebner, Magdalena Aguiló, and Francesc Díaz

The European Conference on Lasers and Electro-Optics 2015

Munich Germany
21–25 June 2015
ISBN: 978-1-4673-7475-0

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Nanosecond 2µm Solid-state Lasers (CA_4)

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J. M. Serres, X. Mateos, P. Loiko, V. Jambunathan, K. Yumashev, V. Petrov, U. Griebner, M. Aguiló, and F. Díaz, "Q-switching of a Tm,Ho:KLu(WO4)2 Microchip Laser at 2061 nm by a Graphene-Based Saturable Absorber," in 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, (Optica Publishing Group, 2015), paper CA_4_5.

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Abstract

Pulsed solid-state lasers emitting in the eye-safe spectral region around 2 μm are attractive for numerous applications. Active materials doped with Tm or co-doped with Tm and Ho have suitable laser transitions near 2 μm and can be pumped with commercial diodes. Passively Q-switched solid-state lasers (especially in microchip configuration) by means of a simple saturable absorber (SA) element provide high degree of compactness and robustness. The use of graphene as SA is gaining interest because of its outstanding physical and chemical properties [1].

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