Abstract

Magnesium oxide doped stoichiometric lithium niobate (MgO:SLN) is a widely used substitute for congruent lithium niobate (CLN) in the field of high-power quasi-phase matched (QPM) device application due to its high photorefractive-damage resistance and low coercive field. However, there are many differences in using MgO:SLN and CLN for the fabrication of QPM devices, such as coercive field, defect effect and switching time. MgO:SLN was reported to have a very long switching time during polarization reversal and a stronger effect of domain widening out of the electrode than CLN. This makes it difficult to fabricate short-pitch domain-inverted patterns for visible light conversion applications [1]. The rigorous understanding of domain wall motion and morphology with respect to applied field is required for fine-structured QPM device fabrication.

© 2013 IEEE