Abstract

Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising new platform for silicon photonics. Low temperature required for its deposition provides an excellent compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Besides, recent works have pointed out that a-Si:H exhibits an enhanced nonlinear efficiency that, combined with low linear losses, makes this material as an ideal candidate for the development of all - optical signal processing silicon devices.

© 2013 IEEE

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