Abstract

The integration of dissimilar materials such as the glass and semiconductors offers novel opportunities for photonic components engineering. The differing physical and chemical properties of the two types of materials bring about several fabrication challenges. The integration of semiconductor laser sources with silica waveguides [1] and the deposition of GaAs, on glass substrates using pulsed laser deposition (PLD) [2] were experimented with in the past. In this work we report a strategy for fabrication and integration of an Er³⁺-doped phosphate modified tellurite (PT) glass on a GaAs substrate using PLD under reactive oxygen atmosphere. Reactive ion etching (RIE) process is used to define channel waveguides on the glass-semiconductor integrated thin film.

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