High-Power Ultrafast Laser Source with 300 MHz Repetition Rate for Trapped-Ion Quantum Logic

A. Jechow; M.J. Petrasiunas; M.G. Pullen; J. Canning; M. Stevenson; P.S. Westbrook; K.S. Feder; D. Kielpinski

CLEO/Europe and EQEC 2011 Conference Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CF_P24

High-Power Ultrafast Laser Source with 300 MHz Repetition Rate for Trapped-Ion Quantum Logic

A. Jechow, M.J. Petrasiunas, M.G. Pullen, J. Canning, M. Stevenson, P.S. Westbrook, K.S. Feder, and D. Kielpinski

The European Conference on Lasers and Electro-Optics 2011

Munich Germany
22–26 May 2011
ISBN: 978-1-4577-0532-8

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A. Jechow, M. J. Petrasiunas, M. G. Pullen, J. Canning, M. Stevenson, P. S. Westbrook, K. S. Feder, and D. Kielpinski, "High-Power Ultrafast Laser Source with 300 MHz Repetition Rate for Trapped-Ion Quantum Logic," in CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CF_P24.

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Abstract

Trapped ions are a major candidate technology for scalable quantum computation. However, current methods for performing quantum logic gates with trapped ions are limited to gate times of about 10 μs. This drawback is overcome in a recently proposed scheme that uses pairs of counter-propagating π-pulses, resonant with an allowed ion transition, where the time needed for a gate operation is inversely proportional to the laser repetition rate [1]. Our MOPA architecture allows scaling to high repetition rate at constant pulse energy.

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