Characterization of InGaAs and InGaAsN saturable absorber mirrors for high power mode locked sub-ps thin-disk lasers

F. Schättiger; D. Bauer; D. Bauer; D. Sutter; J. Puustinen; M. Guina; T. Dekorsy

CLEO/Europe and EQEC 2011 Conference Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CE1_2

Characterization of InGaAs and InGaAsN saturable absorber mirrors for high power mode locked sub-ps thin-disk lasers

F. Schättiger, D. Bauer, D. Sutter, J. Puustinen, M. Guina, and T. Dekorsy

The European Conference on Lasers and Electro-Optics 2011

Munich Germany
22–26 May 2011
ISBN: 978-1-4577-0532-8

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Material Fabrication and Characterization (CE1)

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F. Schättiger, D. Bauer, D. Sutter, J. Puustinen, M. Guina, and T. Dekorsy, "Characterization of InGaAs and InGaAsN saturable absorber mirrors for high power mode locked sub-ps thin-disk lasers," in CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CE1_2.

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Abstract

We report on the characteristic parameters of two types of saturable absorber mirrors: type 1 absorbers contain InGaAs quantum wells whereas absorbers of type 2 have InGaAsN quantum wells. For both types the structure is similar. Both types of absorbers were post-growth annealed in order to characterize the stability under elevated temperatures. We investigated the static and the dynamic reflectivity of the two absorber types in the cases of no post-growth annealing and annealing at 450° C, 650° C, and 700° C, respectively. The absorbers are designed for usage in a sub-ps mode locked Yb:YAG laser at a wavelength of 1030 nm [1].

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