Abstract

Heterogeneous integration of III-V semiconductor compounds on Silicon on insulator (SOI) is one the key technologies for next generation on chip optical interconnects. Indeed, this hybrid platform combines the best of both material systems: on one hand, the CMOS compatibility and the predispositions of silicon to be used for fabricating an ultra compact low loss optical circuitry; on the other hand, the versatility of III-V semiconductors for making laser sources and active devices. This approach was recently used for demonstrating laser emission [1,2], light amplification [1], modulation [3] and optical flip-flops [4].

© 2011 Optical Society of America