Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_Europe > 2011 > CC2 > CC2_4
  • CLEO/Europe and EQEC 2011 Conference Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2011),
  • paper CC2_4

Nondestructive Rapid Measurement of GaAs, GaN, SiC, And Si Semiconductors Using One Tunable Terahertz Source

A. Hamano, Y. Takatsu, S. Ohno, H. Minamide, H. Ito, and Y. Usuki

Not Accessible

Your library or personal account may give you access

Abstract

The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz [1,2].

© 2011 Optical Society of America

PDF Article
More Like This
Terahertz Imaging and Spectroscopy of Large-Area Single-Layer Graphene

J. L. Tomaino, A. D. Jameson, J. W. Kevek, M. J. Paul, A. M. van der Zande, R. A. Barton, P. L. McEuen, E. D. Minot, and Yun-Shik Lee
CThEE4 CLEO: Science and Innovations (CLEO:S&I) 2011

Continuous Wave Intracavity Terahertz Source

M. Scheller, J. M. Yarborough, J. V. Moloney, M. Fallahi, M. Koch, and S. W. Koch
CC4_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011

Optimization of Broadly Tunable BNA-DFG Terahertz-Wave Source

T. Notake, Y. Wang, K. Nawata, H. Kawamata, and H. Minamide
NMC5 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2011

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use