Abstract
The primary advantage of semiconductor disk lasers compared with in-plane diode lasers is an improved transverse mode control which enables high output power with diffraction-limited beam quality [1, 2]. They combine many advantages of solid-state lasers with the supplemental benefit of wavelength tailoring provided by the semiconductor gain material. The (AlGaIn)(AsSb) material system establishes a steady platform for optoelectronic devices operating in the mid-infrared spectral range [3]. In this study we report a GaSb-based optically-pumped semiconductor disk laser emitting the radiation tunable over 130 nm around 2.5 μm.
© 2011 Optical Society of America
PDF ArticleMore Like This
M. Rattunde, S. Kaspar, B. Rösener, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner
CB6_4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011
Jukka-Pekka Alanko, Christian Grebing, Jonna Paajaste, Riku Koskinen, Soile Suomalainen, Antti Härkönen, Günter Steinmeyer, and Mircea Guina
CTuC5 CLEO: Science and Innovations (CLEO:S&I) 2011
M. Rattunde, B. Rösener, N. Hempler, J.-M. Hopkins, D. Burns, R. Moser, C. Manz, K. Köhler, and J. Wagner
CB7_5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2009