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  • CLEO/Europe and EQEC 2011 Conference Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2011),
  • paper CB6_6

2.5 µm Semiconductor Disk Laser With 130 nm Tuning Range

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Abstract

The primary advantage of semiconductor disk lasers compared with in-plane diode lasers is an improved transverse mode control which enables high output power with diffraction-limited beam quality [1, 2]. They combine many advantages of solid-state lasers with the supplemental benefit of wavelength tailoring provided by the semiconductor gain material. The (AlGaIn)(AsSb) material system establishes a steady platform for optoelectronic devices operating in the mid-infrared spectral range [3]. In this study we report a GaSb-based optically-pumped semiconductor disk laser emitting the radiation tunable over 130 nm around 2.5 μm.

© 2011 Optical Society of America

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