Abstract
In recent years color centers in diamond have attracted significant interest as solid-state single photon sources [1]. Preferable properties for this application are narrow emission bandwidth, high collection efficiency, photostability and operation at room temperature. Single photon emission has been demonstrated with nitrogen-vacancy (NV), nickel-nitrogen (NE8) [1] and silicon-vacancy (SiV) color centers [2]. Further steps towards efficient single photon sources and realization of various quantum information protocols have to include the coupling of single defect centers to cavity structures with small modal volumes and high Q-factors [3].
© 2009 IEEE
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