Abstract
Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III-V materials and are limited in their capacity to amplify WDM signals (< 20 Gbit/s per channel) due to transient carrier effects [1], EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their all-optical operation and long excited-state lifetime mean that amplification at high data rates is feasible [2]. Previously, transmission experiments at up to 10 Gbit/s have been reported using an EDWA [3]. In this paper we present the results of amplification of a 40-Gbit/s optical signal using an EDWA.
© 2009 IEEE
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