Abstract
We develop a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse grained time-domain approach. Under the approximation of intraband quasi equilibrium, our model accounts for the dispersion of gain, absorption and refractive index, nonlinear gain saturation from ultrafast processes, self-phase modulation, and spontaneous emission noise. We compare the predictions of our model with the performances of a Quasi-40-GHz Passively Mode-Locked AlGaInAs 1.55-m Strained Quantum Well laser.
© 2009 IEEE
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