Use of SiO2 nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher

Ding-Shin Wang; Jiun-Jie Chao; Ching-Fuh Lin

CLEO/Europe and EQEC 2009 Conference Digest
(Optica Publishing Group, 2009),
paper CE_P23

Use of SiO₂ nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher

Ding-Shin Wang, Jiun-Jie Chao, and Ching-Fuh Lin

The European Conference on Lasers and Electro-Optics 2009

Munich Germany
14–19 June 2009
ISBN: 978-1-4244-4080-1

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D. Wang, J. Chao, and C. Lin, "Use of SiO2 nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher," in CLEO/Europe and EQEC 2009 Conference Digest, (Optica Publishing Group, 2009), paper CE_P23.

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Abstract

Large-area GaAs nanowires are fabricated by using SiO₂ nanoparticles as a mask. SiO₂ nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by Induced-Coupled Plasma Reactive Ion Etcher.

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