Abstract

Quantum dot (QD) based semiconductor electro-absorbers have attracted a lot of attention recently due to their unique dynamical properties, which make them perfect components for various types of mode-locked lasers. It has been shown that Time Resolved Pump-Probe spectroscopy can provide a direct insight into dynamics of carrier tunnelling processes at high reverse bias voltages [1] and demonstrates the electro-absorption properties of a bi-layer QD waveguide [2]. In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the Single Colour Pump-Probe technique [3].

© 2009 IEEE