Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials

C. Bückers; S. W. Koch; A. Thränhardt; J. Hader; J. Hader; J. V. Moloney; J. V. Moloney; C. Karcher; W. Heimbrodt; B. Kunert; B. Kunert; K. Volz; W. Stolz

CLEO/Europe and EQEC 2009 Conference Digest
(Optica Publishing Group, 2009),
paper CB8_2

Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials

C. Bückers, S. W. Koch, A. Thränhardt, J. Hader, J. V. Moloney, C. Karcher, W. Heimbrodt, B. Kunert, K. Volz, and W. Stolz

The European Conference on Lasers and Electro-Optics 2009

Munich Germany
14–19 June 2009
ISBN: 978-1-4244-4080-1

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Physics of Semiconductor Lasers (CB8)

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C. Bückers, S. W. Koch, A. Thränhardt, J. Hader, J. V. Moloney, C. Karcher, W. Heimbrodt, B. Kunert, K. Volz, and W. Stolz, "Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials," in CLEO/Europe and EQEC 2009 Conference Digest, (Optica Publishing Group, 2009), paper CB8_2.

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Abstract

The development of efficient and powerful semiconductor laser devices demands a detailed analysis of their optical properties to characterize and identify the underlying physical processes. Such an analysis enables us to evaluate the relevant effects influencing the laser properties and thus, to study them systematically in dependence of design parameters in order to find optimized structural layouts. For this purpose we have developed a microscopic many-particle model; based on the semiconductor Bloch equations the absorption or rather the laser gain of a system can be quantitatively predicted [1].

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