Abstract
Short wavelength (850 nm) VCSELs operating at speeds of 25 Gb/s and above are needed for future high capacity, short reach data communication links. The modulation bandwidth is intrinsically limited by the differential gain of the QWs used in the active region of the VCSEL. In this work we explore the use of strained InGaAs/AlGaAs QWs and benchmark the performance against conventional GaAs/AlGaAs QWs.
© 2009 IEEE
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