Abstract

The recent discovery of the efficient sensitizing action of silicon nanoclusters (Si-nc) toward Er’ embedded in a Si0₂ matrix has opened the field of several applications in integrated optoelectronic devices. In this configuration, the effective absorption cross section gains at least 3 orders of magnitude. Another rare earth ion (Nd³⁺) also presents an interest since its emission in the near infrared region is widely used in laser emission. However, Nd³⁺ ions incorporated in silica are also suffering from a weak direct excitation. Recent studies have evidenced the possible sensitizing role of Si-nc towards Nd³⁺ in such dielectric matrix [1], Nd³⁺-doped silicon-rich silicon oxide (SRSO) thin films have been fabricated by reactive magnetron sputtering of a pure silica target topped by Nd₂0₃ chips. The incorporation of silicon excess in the films is controlled by the partial hydrogen pressure, P_H2- introduced in the Ar plasma. Photoluminescence (PL) experiments were made at room temperature using a Nd non resonant (488mn) excitation line from Ar laser. The composition of the samples was determined by Rutherford Backscattering experiments.

© 2007 IEEE