Abstract

Although semiconductor lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field, there remain a number of critical issues involving their dynamical stability properties. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. We have analyzed the rate equations for the intensity I of the laser field, the occupation probability p of a dot in the laser, and the number n of carriers in the wetting layer per dot [1]

© 2007 IEEE