Abstract

The gas source molecular beam (GSMBE) grown dashes-in-a-well devices presented here is a separate confinement heterostructure (SCH) comprising six layers of InAs quantum dashes each of them embedded within an InGaAsP quantum well, 8 nm thick, separated by 20 nm thick InGaAsP barriers. The total thickness of the waveguide is about 440nm. Then, narrow ridge waveguides were processed perpendicular to the elongation of the quantum dashes for monomode far field patterns. From four different cavity lengths we have extracted the internal quantum efficiency (0.55) and the internal losses (6 cm−1)

© 2007 IEEE

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