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  • CLEO/Europe and IQEC 2007 Conference Digest
  • (Optica Publishing Group, 2007),
  • paper CB4_6

1.3 and 1.5 μm Wavelength Wafer Fused InAlGaAs/InP - AlGaAs/GaAs VCSELs with High Single Mode Output Power

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Abstract

We report on significant progress in wafer fused VCSELs with 1.3 and 1.5- μm emission wavelengths for communication and chemical sensing applications. The AlGaAs/GaAs top and bottom DBRs as well as the InP-based active region wafers were grown separately by metal organic vapor phase epitaxy (MOVPE). The device structure was very similar to that previously reported [1,2]. The active cavity contained 5-6 InAlGaAs/InP compressively strained quantum wells (QWs), a tunnel junction structure and special trimming layers for optical cavity adjustment before the fusion. Patterning of the surface of the wafers before fusion was used for definition of self-aligned current and optical confinement region. VCSEL wafers for emission wavelengths of 1320nm and 1512 nm were designed and fabricated in this way. After wafer fusion, conventional processing was implemented for defining VCSEL devices with an optical aperture of 7 or 9μm diameter.

© 2007 IEEE

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