Abstract

Semiconductor lasers with narrow-stripe and edge-emitting structures are described by two varaibles of the rate equations for complex optical field and carrier density and they are essentially stable lasers categorized into class B. However, they are easily destabilized by external perturbations, such as optical feedback, optical injection, and injection current modulation, and show nonlinear dynamics for the time development, since the extra degree of freedom is introduced by the perturbations and the systems contain equivalently more than three variables that can show chaotic dynamics. Extensive studies for nonlinear dynamics in edge-emitting semiconductor lasers have been published. [1,2]

© 2007 IEEE