Abstract

The interest in diode-pumped semiconductor disk lasers (SCDLs) is motivated by achieving high output power in combination with nearly diffraction limited beam quality. Moreover, SCDLs exhibit a high potential for short-pulse generation at very high repetition rates [1]. The SCDL gain section typically consists of alternating layers of semiconductor materials, namely quantum wells (QWs), spacer layers and strain compensating layers, leading to a specific profile of the Coulomb potential (bandgap) and refractive index. The pump radiation is mainly absorbed by the GaAs spacer layers, and subsequently the generated carriers drift into the QWs.

© 2007 IEEE