Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe.

A. Dijkstra; M.A.J. v. Tilburg; E.M.T. Fadaly; V.T. v. Lange; M. A. Verheijen; J.R. Suckert; C. Rodl; J. FurthmUller; F. Bechstedt; S. Botti; D. Busse; J.J. Finley; E.P.A.M. Bakkers; J.E.M. Haverkort

doi:10.1364/CLEO_AT.2020.JW2F.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper JW2F.3
•https://doi.org/10.1364/CLEO_AT.2020.JW2F.3

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe.

A. Dijkstra, M.A.J. v. Tilburg, E.M.T. Fadaly, V.T. v. Lange, M. A. Verheijen, J.R. Suckert, C. Rodl, J. FurthmUller, F. Bechstedt, S. Botti, D. Busse, J.J. Finley, E.P.A.M. Bakkers, and J.E.M. Haverkort

CLEO: Applications and Technology 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Joint Poster Session 11 (JW2F)

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A. Dijkstra, M. A. J. v. Tilburg, E. M. T. Fadaly, V. T. v. Lange, M. A. Verheijen, J. R. Suckert, C. Rodl, J. FurthmUller, F. Bechstedt, S. Botti, D. Busse, J. J. Finley, E. P. A. M. Bakkers, and J. E. M. Haverkort, "Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe.," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper JW2F.3.

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Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

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