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Heterogeneous Gallium-Arsenide Lasers on Silicon-Nitride

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Abstract

We demonstrate heterogeneously integrated gallium arsenide (GaAs) on silicon nitride (SiN) lasers using wafer-scale integration operating at a wavelength below Si bandgap with high uniformity enabled by advanced lithography and optimized fabrication. The technology promises to revolutionize the fields of AR/VR and quantum technology among others.

© 2020 The Author(s)

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More Like This
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