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High-Q Dispersion-Engineered Si3N4 Microresonators Based on a Subtractive Processing Technique

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Abstract

We demonstrate dispersion-engineered Si3N4 microresonators with mean Q values >10 million fabricated using standard subtractive techniques. Soliton microcombs at 100 GHz line spacing and mode-locked dark-pulse Kerr combs are reported.

© 2020 The Author(s)

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