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Low-Noise GaN p-i-n Avalanche Photodiodes for Ultraviolet Applications Using an Ion-Implantation Isolation Technique

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Abstract

We report high-performance GaN avalanche photodiodes using a novel ion implanted isolation technique. The devices showed low dark current, an equivalent noise power of < 5×10−16 WHz−0.5 and avalanche gain of 7×105 at λ = 280 nm.

© 2020 The Author(s)

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