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High Internal Quantum Efficiency from AlGaN-delta-GaN Quantum Well at 260 nm

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Abstract

High internal quantum efficiency (85%) was realized from the AlGaN-delta-GaN quantum well (QW) structure grown on a conventional AlN/sapphire template by Molecular Beam Epitaxy. The peak emission wavelength is observed at 260 nm.

© 2020 The Author(s)

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