Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Sub-mA threshold 1.3 µm CW lasing from electrically pumped micro-rings grown on (001) Si

Open Access Open Access

Abstract

We demonstrate the first electrically pumped quantum-dot micro-lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 µm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°C.

© 2017 Optical Society of America

PDF Article
More Like This
Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau
SM1G.3 CLEO: Science and Innovations (CLEO:S&I) 2016

Quadruple reduction of threshold current density for micro-ring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, and John E. Bowers
SW3Q.3 CLEO: Science and Innovations (CLEO:S&I) 2018

Quantum dot micro-lasers integrated with photodetectors and optical amplifiers on (001) Si via waveguide coupling

Chen Shang, Yating Wan, Daehwan Jung, Justin Norman, MJ Kennedy, Di Liang, Chong Zhang, Arthur C. Gossard, and John E. Bowers
SM2I.6 CLEO: Science and Innovations (CLEO:S&I) 2018

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved