Abstract

We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.

© 2016 Optical Society of America

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Supplementary Material (1)

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