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GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

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Abstract

By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

© 2016 Optical Society of America

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