Abstract
By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.
© 2016 Optical Society of America
PDF ArticleMore Like This
Vin-Cent Su, Po-Hsun Chen, Ta-Cheng Hsu, Yu-Yao Lin, and Chieh-Hsiung Kuan
AM2B.5 CLEO: Applications and Technology (CLEO:A&T) 2017
Po-Hsun Chen, Vin-Cent Su, Ming-Lun Lee, Han-Bo Yang, Yao-Hong You, Yen-Pu Chen, Zheng-Hung Hung, Ta-Cheng Hsu, Yu-Yao Lin, Ray-Ming Lin, and Chieh-Hsiung Kuan
JTh2A.31 CLEO: Applications and Technology (CLEO:A&T) 2015
Po-Hsun Chen, Vincent Su, Yao-Hong You, Ming-Lun Lee, Cheng-Ju Hsieh, Chieh-Hsiung Kuan, Hung-Ming Chen, Han-Bo Yang, Hung-Chou Lin, Ray-Ming Lin, Fu-Chuan Chu, and Gu-Yi Su
CM4F.8 CLEO: Science and Innovations (CLEO:S&I) 2013